Fujitsu Laboratories, Ltd. announced the development of a millimeter-waveband power amplifier using standard 90nm CMOS process technology. Targeting millimeter-wave applications, Fujitsu Labs developed a standard CMOS modeling technology and design techniques to minimize high-frequency signal loss, thereby enabling the development of the world's first CMOS-based PA that operates at 77GHz. The technology realizes CMOS radio frequency front-end circuitry that includes a PA, thereby enabling integration with baseband circuitry on a single chip, for use in millimeter-wave automotive radar systems.

The millimeter wave is ideal for measuring with high resolution and accuracy the distance between two points, as well as for high-capacity data transmission. As such, the millimeter wave is starting to be applied to automotive radar systems and to wireless transmission systems. Typically, compound semiconductors have been used in the RF front-end circuits of these systems in order to realize high gain and output of high-frequency signals. On the other hand, for CMOS technology, which features high levels of integration and high-functionality, progress has been made in regard to operational speeds - attributable to ongoing miniaturization - and it is now possible to apply millimeter wave circuits to achieve operation that was previously achieved through compound semiconductors.

The world's first PA operating has 77GHz to achieve 8.5 dB gain and 6.3 decibel milliwatts saturated output power. Furthermore, a separate PA operating at 60GHz was developed and achieved 8.3 dB of gain and 10.6 dBm saturated output power.

Fujitsu new technology makes it possible to implement 77GHz automotive radars using inexpensive standard CMOS technologies. These developments could also be used to extend the transmission range of wireless communications systems in the 60GHz band.