Intel is the first to implement an innovative combination of new materials that drastically reduces transistor leakage and increases performance in its 45nm process technology. The company will use a new material with a property called high-k, for the transistor gate dielectric, and a new combination of metal materials for the transistor gate electrode.

"The implementation of high-k and metal materials marks the biggest
change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s," said Intel Co-Founder Gordon Moore.

Transistors are tiny switches that process the ones and zeroes of the
digital worlds. The gate turns the transistor on and off and the gate
dielectric is an insulator underneath it that separates it from the channel
where current flows. The combination of the metal gates and the high-k gate dielectric leads to transistors with very low current leakage and record high performance.

"As more and more transistors are packed onto a single piece of
silicon, the industry continues to research current leakage reduction solutions," said Mark Bohr, Intel senior fellow. "Meanwhile our engineers and designers have achieved a remarkable accomplishment that ensures the leadership of Intel products and innovation. Our implementation of novel high-k and metal gate transistors for our 45nm process technology will help Intel deliver even faster, more energy efficient multi-core products that build upon our successful Intel Core 2 and Xeon family of processors, and extend Moore's Law well into the next decade."

For comparison, approximately 400 of Intel's 45nm transistors could fit on the surface of a single human red blood cell. Just a decade ago, the
state-of-the-art process technology was 250nm, meaning transistor dimensions were approximately 5.5 times the size and 30 times the area of the technology announced today by Intel.

As the number of transistors on a chip roughly doubles every two years in accordance with Moore's Law, Intel is able to innovate and integrate, adding more features and computing processing cores, increasing performance, and decreasing manufacturing costs and cost per transistor. To maintain this pace of innovation, transistors must continue to shrink to ever-smaller sizes. However, using current materials, the ability to shrink transistors is reaching fundamental limits because of increased power and heat issues that develop as feature sizes reach atomic levels. As a result, implementing new materials is imperative to the future of Moore's Law and the economics of the information age.

Ved Prakash, ITvoir Network